DENSIFICATION OF SIPOS

被引：13

作者：

MAXWELL, HR

KNOLLE, WR

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1981年 / 128卷 / 03期

关键词：

D O I：

10.1149/1.2127461

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：576 / 580

页数：5

共 13 条

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[4]

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[5]

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[6]

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[7]

MAXWELL HR, 1978, SEMICONDUCTOR CHARAC, P180

[8] EFFECTS OF OXYGEN DOPING AND SUBSEQUENT ANNEALING IN NITROGEN ON THE STRUCTURE OF POLYCRYSTALLINE SILICON [J].

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[9]

MOCHIZUKI M, 1976, J JAPAN SOC APPL P S, V15, P41

[10] COMPARISON OF PROPERTIES OF DIELECTRIC FILMS DEPOSITED BY VARIOUS METHODS [J].

PLISKIN, WA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (05) :1064-1081

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