A HIGH-EFFICIENCY VERTICAL-CAVITY SURFACE-EMITTING SWITCHING LASER FABRICATED WITH POSTGROWTH CAVITY MODE POSITIONING

被引：7
作者：
EVALDSSON, PA [1 ]
TAYLOR, GW [1 ]
COOKE, PW [1 ]
SARGOOD, SK [1 ]
KIELY, PA [1 ]
DOCTER, DP [1 ]
机构：
[1] GEOCENTERS INC,EATONTOWN,NJ 07724
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1993年 / 5卷 / 06期
关键词：
D O I：
10.1109/68.219693
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report on the first room temperature continuous wave operation of the double heterostructure optoelectronic switching laser implemented as a vertical-cavity laser. A deposited dielectric top reflector of SiO2/TiO2 allowed the use of a cavity etch back technique after the sample was grown to position the cavity mode at the desired wavelength. Room temperature CW threshold currents as low as 4.8 mA for a 14 mum diameter device was obtained with slope efficiencies of 0.45 mW/mA. The maximum CW output power was 2.5 mW and the resistivity was 4 x 10(-4) OMEGAcm2.
引用
收藏
页码：634 / 636
页数：3
相关论文
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