PROPERTIES OF CEO2 AND CEO2-X FILMS .2. HIGH-TEMPERATURE PROPERTIES

被引:39
|
作者
SCHWAB, RG [1 ]
STEINER, RA [1 ]
MAGES, G [1 ]
BEIE, HJ [1 ]
机构
[1] SIEMENS AG,CORP RES & DEV,W-8520 ERLANGEN,GERMANY
关键词
D O I
10.1016/0040-6090(92)90140-7
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
High temperature X-ray investigations of CeO2 films gve a linear thermal expansion coefficient of 11.6 x 10(-6) K-1, corresponding to a temperature dependence of the lattice parameter of a0 = (5.4067 + T x 6.37 x 10(-5)) angstrom. At oxygen partial pressures p(O2) of 0.2-10(-22) bar and at temperatures between 800 and 1100-degrees-C, the lattice parameter of alpha'-CeO2 changes linearly with the oxygen partial pressure. The conductivity of substoichiometric CeO2 in the field of the alpha' phase also changes linearly with the oxygen partial pressure. A plot of p(O2) vs. the conductivity sigma gives a straight line with a slope sigma almost-equal-to p(O2)-1/6. This slope is constant over the total range of temperatures and oxygen partial pressures. So CeO2 thin films can be used for high temperature oxygen sensors.
引用
收藏
页码:288 / 293
页数:6
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