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APPLICATIONS OF ELECTROCHEMICAL METHODS FOR SEMICONDUCTOR CHARACTERIZATION .1. HIGHLY REPRODUCIBLE CARRIER CONCENTRATION PROFILING OF VPE''HI-LO'' NORMAL-GAAS
被引:72
作者
:
AMBRIDGE, T
论文数:
0
引用数:
0
h-index:
0
AMBRIDGE, T
STEVENSON, JL
论文数:
0
引用数:
0
h-index:
0
STEVENSON, JL
REDSTALL, RM
论文数:
0
引用数:
0
h-index:
0
REDSTALL, RM
机构
:
来源
:
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
1980年
/ 127卷
/ 01期
关键词
:
D O I
:
10.1149/1.2129623
中图分类号
:
O646 [电化学、电解、磁化学];
学科分类号
:
081704 ;
摘要
:
引用
收藏
页码:222 / 228
页数:7
相关论文
共 19 条
[1]
AUTOMATIC CARRIER CONCENTRATION PROFILE PLOTTER USING AN ELECTROCHEMICAL TECHNIQUE
AMBRIDGE, T
论文数:
0
引用数:
0
h-index:
0
机构:
PO RES DEPT LONDON,DOLLIS HILL,LONDON NW2 7DT,ENGLAND
PO RES DEPT LONDON,DOLLIS HILL,LONDON NW2 7DT,ENGLAND
AMBRIDGE, T
FAKTOR, MM
论文数:
0
引用数:
0
h-index:
0
机构:
PO RES DEPT LONDON,DOLLIS HILL,LONDON NW2 7DT,ENGLAND
PO RES DEPT LONDON,DOLLIS HILL,LONDON NW2 7DT,ENGLAND
FAKTOR, MM
[J].
JOURNAL OF APPLIED ELECTROCHEMISTRY,
1975,
5
(04)
: 319
-
328
[2]
APPLICATIONS OF ELECTROCHEMICAL METHODS FOR SEMICONDUCTOR CHARACTERIZATION .1. HIGHLY REPRODUCIBLE CARRIER CONCENTRATION PROFILING OF VPE''HI-LO'' NORMAL-GAAS
AMBRIDGE, T
论文数:
0
引用数:
0
h-index:
0
AMBRIDGE, T
STEVENSON, JL
论文数:
0
引用数:
0
h-index:
0
STEVENSON, JL
REDSTALL, RM
论文数:
0
引用数:
0
h-index:
0
REDSTALL, RM
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1980,
127
(01)
: 222
-
228
[3]
AMBRIDGE T, 1975, I PHYS C SER, V24, P320
[4]
GROWTH OF SEMI-INSULATING EPITAXIAL GALLIUM-ARSENIDE BY CHROMIUM DOPING IN METAL-ALKYL+HYDRIDE SYSTEM
BASS, SJ
论文数:
0
引用数:
0
h-index:
0
BASS, SJ
[J].
JOURNAL OF CRYSTAL GROWTH,
1978,
44
(01)
: 29
-
33
[5]
DETECTION OF STRUCTURAL DEFECTS IN GAAS BY ELECTROCHEMICAL ETCHING
FAKTOR, MM
论文数:
0
引用数:
0
h-index:
0
FAKTOR, MM
STEVENSON, JL
论文数:
0
引用数:
0
h-index:
0
STEVENSON, JL
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1978,
125
(04)
: 621
-
629
[6]
EFFECT OF HEAT-TREATMENT ON N-TYPE BULK GROWN AND VAPOR-PHASE EPITAXIAL INDIUM-PHOSPHIDE
GUHA, S
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,YORKSHIRE,ENGLAND
GUHA, S
HASEGAWA, F
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,YORKSHIRE,ENGLAND
HASEGAWA, F
[J].
SOLID-STATE ELECTRONICS,
1977,
20
(01)
: 27
-
28
[7]
Hammer R., 1970, Review of Scientific Instruments, V41, P292, DOI 10.1063/1.1684503
[8]
FREQUENCY-DEPENDENCE OF GAAS SCHOTTKY-BARRIER CAPACITANCES
HESSE, K
论文数:
0
引用数:
0
h-index:
0
HESSE, K
STRACK, H
论文数:
0
引用数:
0
h-index:
0
STRACK, H
[J].
SOLID-STATE ELECTRONICS,
1972,
15
(07)
: 767
-
+
[9]
HUGHES FD, 1972, ACTA ELECTRON, V15, P43
[10]
INFLUENCE OF DEBYE LENGTH ON C-V MEASUREMENTS OF DOPING PROFILES
JOHNSON, WC
论文数:
0
引用数:
0
h-index:
0
JOHNSON, WC
PANOUSIS, PT
论文数:
0
引用数:
0
h-index:
0
PANOUSIS, PT
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1971,
ED18
(10)
: 965
-
&
←
1
2
→
共 19 条
[1]
AUTOMATIC CARRIER CONCENTRATION PROFILE PLOTTER USING AN ELECTROCHEMICAL TECHNIQUE
AMBRIDGE, T
论文数:
0
引用数:
0
h-index:
0
机构:
PO RES DEPT LONDON,DOLLIS HILL,LONDON NW2 7DT,ENGLAND
PO RES DEPT LONDON,DOLLIS HILL,LONDON NW2 7DT,ENGLAND
AMBRIDGE, T
FAKTOR, MM
论文数:
0
引用数:
0
h-index:
0
机构:
PO RES DEPT LONDON,DOLLIS HILL,LONDON NW2 7DT,ENGLAND
PO RES DEPT LONDON,DOLLIS HILL,LONDON NW2 7DT,ENGLAND
FAKTOR, MM
[J].
JOURNAL OF APPLIED ELECTROCHEMISTRY,
1975,
5
(04)
: 319
-
328
[2]
APPLICATIONS OF ELECTROCHEMICAL METHODS FOR SEMICONDUCTOR CHARACTERIZATION .1. HIGHLY REPRODUCIBLE CARRIER CONCENTRATION PROFILING OF VPE''HI-LO'' NORMAL-GAAS
AMBRIDGE, T
论文数:
0
引用数:
0
h-index:
0
AMBRIDGE, T
STEVENSON, JL
论文数:
0
引用数:
0
h-index:
0
STEVENSON, JL
REDSTALL, RM
论文数:
0
引用数:
0
h-index:
0
REDSTALL, RM
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1980,
127
(01)
: 222
-
228
[3]
AMBRIDGE T, 1975, I PHYS C SER, V24, P320
[4]
GROWTH OF SEMI-INSULATING EPITAXIAL GALLIUM-ARSENIDE BY CHROMIUM DOPING IN METAL-ALKYL+HYDRIDE SYSTEM
BASS, SJ
论文数:
0
引用数:
0
h-index:
0
BASS, SJ
[J].
JOURNAL OF CRYSTAL GROWTH,
1978,
44
(01)
: 29
-
33
[5]
DETECTION OF STRUCTURAL DEFECTS IN GAAS BY ELECTROCHEMICAL ETCHING
FAKTOR, MM
论文数:
0
引用数:
0
h-index:
0
FAKTOR, MM
STEVENSON, JL
论文数:
0
引用数:
0
h-index:
0
STEVENSON, JL
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1978,
125
(04)
: 621
-
629
[6]
EFFECT OF HEAT-TREATMENT ON N-TYPE BULK GROWN AND VAPOR-PHASE EPITAXIAL INDIUM-PHOSPHIDE
GUHA, S
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,YORKSHIRE,ENGLAND
GUHA, S
HASEGAWA, F
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,YORKSHIRE,ENGLAND
HASEGAWA, F
[J].
SOLID-STATE ELECTRONICS,
1977,
20
(01)
: 27
-
28
[7]
Hammer R., 1970, Review of Scientific Instruments, V41, P292, DOI 10.1063/1.1684503
[8]
FREQUENCY-DEPENDENCE OF GAAS SCHOTTKY-BARRIER CAPACITANCES
HESSE, K
论文数:
0
引用数:
0
h-index:
0
HESSE, K
STRACK, H
论文数:
0
引用数:
0
h-index:
0
STRACK, H
[J].
SOLID-STATE ELECTRONICS,
1972,
15
(07)
: 767
-
+
[9]
HUGHES FD, 1972, ACTA ELECTRON, V15, P43
[10]
INFLUENCE OF DEBYE LENGTH ON C-V MEASUREMENTS OF DOPING PROFILES
JOHNSON, WC
论文数:
0
引用数:
0
h-index:
0
JOHNSON, WC
PANOUSIS, PT
论文数:
0
引用数:
0
h-index:
0
PANOUSIS, PT
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1971,
ED18
(10)
: 965
-
&
←
1
2
→