HIGH-DOSE ARGON IMPLANTATION IN SILICON STUDIED BY X-RAY TOPOGRAPHY

被引：0
作者：
ZIELINSKAROHOZINSKA, E [1 ]
GERWARD, L [1 ]
机构：
[1] TECH UNIV DENMARK,APPL PHYS LAB 3,DK-2800 LYNGBY,DENMARK
来源：
PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES | 1980年 / 41卷 / 03期
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：321 / 330
页数：10
相关论文
共 50 条
[31]   Observation of macrodefects in silicon by the methods of X-ray topography [J].
Mil'vidskij, M.G. ;
Osip'yan, Yu.A. ;
Smirnova, I.A. ;
Suvorov, E.V. ;
Shulakov, E.V. .
Poverkhnost Rentgenovskie Sinkhronnye i Nejtronnye Issledovaniya, 2001, (06) :5-12
[32]   X-RAY TOPOGRAPHY OF DEFORMATION OF SILICON PRODUCED BY INDENTATION [J].
WATTENBE.U .
ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES, 1972, 28 :S169-S169
[33]   HIGH TEMPERATURE CAMERA FOR X-RAY TOPOGRAPHY [J].
BLECH, IA ;
GUYAUX, J ;
COOPER, G .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1967, 38 (05) :638-&
[34]   HIGH-RESOLUTION X-RAY TOPOGRAPHY [J].
KOHLER, R .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1994, 58 (03) :149-157
[35]   Plasma ion implantation of nitrogen into silicon: High resolution x-ray diffraction [J].
Beloto, AF ;
Abramof, E ;
Ueda, M ;
Berni, LA ;
Gomes, GF .
BRAZILIAN JOURNAL OF PHYSICS, 1999, 29 (04) :768-770
[36]   X-ray scattering study of hydrogen implantation in silicon [J].
Sousbie, Nicolas ;
Capello, Luciana ;
Eymery, Jöl ;
Rieutord, Fraņois ;
Lagahe, Chrystelle .
Journal of Applied Physics, 2006, 99 (10)
[37]   A Simple Low-Dose X-Ray CT Simulation From High-Dose Scan [J].
Zeng, Dong ;
Huang, Jing ;
Bian, Zhaoying ;
Niu, Shanzhou ;
Zhang, Hua ;
Feng, Qianjin ;
Liang, Zhengrong ;
Ma, Jianhua .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2015, 62 (05) :2226-2233
[38]   X-ray scattering study of hydrogen implantation in silicon [J].
Sousbie, Nicolas ;
Capello, Luciana ;
Eymery, Joel ;
Rieutord, Francois .
JOURNAL OF APPLIED PHYSICS, 2006, 99 (10)
[39]   AMORPHIZATION PROCESSES STUDIED BY HIGH-DOSE ION-IMPLANTATION INTO METALS [J].
LINKER, G ;
SEIDEL, A ;
STREHLAU, B .
EPM 87: ENERGY PULSE AND PARTICLE BEAM MODIFICATION OF MATERIALS, 1988, 8 :244-246
[40]   6-MEV NI HIGH-DOSE IMPLANTATION INTO SILICON [J].
LINDNER, JKN ;
TEKAAT, E .
EPM 87: ENERGY PULSE AND PARTICLE BEAM MODIFICATION OF MATERIALS, 1988, 8 :155-157
12345