HIGH-DOSE ARGON IMPLANTATION IN SILICON STUDIED BY X-RAY TOPOGRAPHY

被引：0
作者：
ZIELINSKAROHOZINSKA, E [1 ]
GERWARD, L [1 ]
机构：
[1] TECH UNIV DENMARK,APPL PHYS LAB 3,DK-2800 LYNGBY,DENMARK
来源：
PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES | 1980年 / 41卷 / 03期
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
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页码：321 / 330
页数：10
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