EXCIMER LASER-ABLATED BISMUTH TITANATE THIN-FILMS

被引：46

作者：

MAFFEI, N ^{[1
]}

KRUPANIDHI, SB ^{[1
]}

机构：

[1] PENN STATE UNIV,DEPT ENGN SCI & MECH,UNIV PK,PA 16802

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 06期

关键词：

D O I：

10.1063/1.106518

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Bismuth titanate thin films were deposited by the excimer laser ablation technique. Process parameters such as substrate temperature, laser fluence, and gas pressure were investigated and correlated to the resulting film properties. Results suggest an intrinsic bombardment effect on the growing film. The permittivity and dissipation factor measured at 100 kHz were 150 and 0.01, respectively. The ferroelectric properties exhibited a dependence on film orientation and films with preferred c-axis orientation yielded fully saturated hysteresis loops with P(r) = 7-mu-C/cm2 and E(c) = 20 kV/cm.

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页码：781 / 783

页数：3

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