METALLIZATION SYSTEMS FOR OHMIC CONTACTS TO P-TYPE AND N-TYPE GAAS

被引：10
|
作者：
GUPTA, RP [1 ]
FREYER, J [1 ]
机构：
[1] TECH UNIV MUNICH,LEHRSTUHL ALLGEMEINE ELEKTROTECH & ANGEW ELEKTR,D-8000 MUNICH 2,FED REP GER
来源：
INTERNATIONAL JOURNAL OF ELECTRONICS | 1979年 / 47卷 / 05期
关键词：
D O I：
10.1080/00207217908938663
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Various metallization systems to n- and p-type GaAs have been investigated. The fabrication of the ohmic contacts and the method of contact resistance measurements are described. For each metallization system investigated, there exists an optimum alloying cycle (i. e. alloying temperature and time) which gives minimum contact resistance.
引用
收藏
页码：459 / 467
页数：9
相关论文
共 50 条
  • [31] AL-GE OHMIC CONTACTS TO N-TYPE GAAS
    ZULEEG, R
    FRIEBERTSHAUSER, PE
    STEPHENS, JM
    WATANABE, SH
    IEEE ELECTRON DEVICE LETTERS, 1986, 7 (11) : 603 - 604
  • [32] Microstructural analysis of NiInGe ohmic contacts for n-type GaAs
    Tsunoda, Y
    Murakami, M
    JOURNAL OF ELECTRONIC MATERIALS, 2002, 31 (01) : 76 - 81
  • [33] Ohmic contacts to n-type GaSb and n-type GalnAsSb
    Robin K. Huang
    Christine A. Wang
    Christopher T. Harris
    Michael K. Connors
    Daniel A. Shiau
    Journal of Electronic Materials, 2004, 33 : 1406 - 1410
  • [34] Ohmic contacts to n-type GaSb and n-type GaInAsSb
    Huang, RK
    Wang, CA
    Harris, CT
    Connors, MK
    Shiau, DA
    JOURNAL OF ELECTRONIC MATERIALS, 2004, 33 (11) : 1406 - 1410
  • [35] Ohmic contacts properties of Ni/Ag metallization scheme on p-type GaN
    Chuah, L. S.
    Hassan, Z.
    Abu Hassan, H.
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2010, 356 (03) : 181 - 185
  • [36] Ohmic contacts to p-type InAs
    Lysczek, E. M.
    Robinson, J. A.
    Mohney, S. E.
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2006, 134 (01): : 44 - 48
  • [37] Effect of metal type on the contacts to n-type and p-type GaN
    Rennie, J
    Onomura, M
    Nunoue, S
    Hatakoshi, G
    Sugawara, H
    Ishikawa, M
    JOURNAL OF CRYSTAL GROWTH, 1998, 189 : 711 - 715
  • [38] Ohmic contacts to n-type GaN
    Miller, S
    Holloway, PH
    JOURNAL OF ELECTRONIC MATERIALS, 1996, 25 (11) : 1709 - 1714
  • [39] LOW-RESISTANCE OHMIC CONTACTS TO P-TYPE GaAs USING Zn/Pd/Au METALLIZATION.
    Brooks, R.C.
    Chen, C.L.
    Chu, A.
    Mahoney, L.J.
    Mavroides, J.G.
    Manfra, M.J.
    Finn, M.C.
    Electron device letters, 1985, EDL-6 (10): : 525 - 527
  • [40] Formation of WSi-based ohmic contacts to n-type GaAs
    Oku, T
    Furumai, M
    Uchibori, CJ
    Murakami, M
    THIN SOLID FILMS, 1997, 300 (1-2) : 218 - 222
12345