METALLIZATION SYSTEMS FOR OHMIC CONTACTS TO P-TYPE AND N-TYPE GAAS

被引：10

作者：

GUPTA, RP ^{[1
]}

FREYER, J ^{[1
]}

机构：

[1] TECH UNIV MUNICH,LEHRSTUHL ALLGEMEINE ELEKTROTECH & ANGEW ELEKTR,D-8000 MUNICH 2,FED REP GER

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1979年 / 47卷 / 05期

关键词：

D O I：

10.1080/00207217908938663

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Various metallization systems to n- and p-type GaAs have been investigated. The fabrication of the ohmic contacts and the method of contact resistance measurements are described. For each metallization system investigated, there exists an optimum alloying cycle (i. e. alloying temperature and time) which gives minimum contact resistance.

引用

页码：459 / 467

页数：9

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