METALLIZATION SYSTEMS FOR OHMIC CONTACTS TO P-TYPE AND N-TYPE GAAS

被引：10
|
作者：
GUPTA, RP [1 ]
FREYER, J [1 ]
机构：
[1] TECH UNIV MUNICH,LEHRSTUHL ALLGEMEINE ELEKTROTECH & ANGEW ELEKTR,D-8000 MUNICH 2,FED REP GER
来源：
INTERNATIONAL JOURNAL OF ELECTRONICS | 1979年 / 47卷 / 05期
关键词：
D O I：
10.1080/00207217908938663
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Various metallization systems to n- and p-type GaAs have been investigated. The fabrication of the ohmic contacts and the method of contact resistance measurements are described. For each metallization system investigated, there exists an optimum alloying cycle (i. e. alloying temperature and time) which gives minimum contact resistance.
引用
收藏
页码：459 / 467
页数：9
相关论文
共 50 条
  • [1] SINTERED OHMIC CONTACTS TO N-TYPE AND P-TYPE GAAS
    SINHA, AK
    SMITH, TE
    LEVINSTEIN, HJ
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (05) : 218 - 224
  • [2] Ohmic contacts to n-type and p-type ZnSe
    Park, MR
    Anderson, WA
    Jeon, M
    Luo, H
    SOLID-STATE ELECTRONICS, 1999, 43 (01) : 113 - 121
  • [3] OHMIC CONTACTS TO P-TYPE AND N-TYPE GASB
    HEINZ, C
    INTERNATIONAL JOURNAL OF ELECTRONICS, 1983, 54 (02) : 247 - 254
  • [4] Ohmic contacts to n-type and p-type GaSB
    Subekti, A
    Chin, VWL
    Tansley, TL
    SOLID-STATE ELECTRONICS, 1996, 39 (03) : 329 - 332
  • [5] A COMMON METALLIZATION SCHEME FOR OHMIC CONTACTS TO N-TYPE AND P-TYPE GAAS - THE AL-NI-SN SYSTEM
    PRASAD, K
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1994, 27 (2-3): : L21 - L23
  • [6] CHARACTERIZATION OF OHMIC CONTACTS ON N-TYPE AND P-TYPE GASB
    VILLEMAIN, E
    GAILLARD, S
    ROLLAND, M
    JOULLIE, A
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1993, 20 (1-2): : 162 - 164
  • [7] OHMIC CONTACTS TO P-TYPE AND N-TYPE GAAS MADE WITH AL-SN-NI
    ROEDEL, RJ
    DAVITO, D
    WEST, W
    ADAMS, R
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1993, 140 (05) : 1450 - 1453
  • [8] OHMIC CONTACTS TO P-TYPE GAAS
    ISHIHARA, O
    NISHITANI, K
    SAWANO, H
    MITSUI, S
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (07) : 1411 - 1412
  • [9] OHMIC CONTACTS TO N-TYPE GAAS
    BOUDVILLE, WJ
    MCGILL, TC
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04): : 1192 - 1196
  • [10] PRELIMINARY STUDIES OF AL-GE-NI OHMIC CONTACTS TO P-TYPE AND N-TYPE GAAS
    GRAHAM, RJ
    ERKAYA, HH
    ROEDEL, RJ
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (01) : 266 - 267
12345