NONLINEAR GAIN EFFECTS IN STRAINED-LAYER LASERS

被引:11
作者
GHITI, A
OREILLY, EP
机构
[1] Department of Physics, University of Surrey, Guildford
关键词
Nonlinearities; Semiconductor lasers;
D O I
10.1049/el:19901279
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The effects of nonlinear gain on the dynamics of a semiconductor laser in which the active region consists of a strainedlayer structure are presented. Gain suppression is enhanced in the presence of strain, thus reducing the relaxation oscillation frequency in strained-layer lasers at very high optical powers compared with equivalent unstrained structures. © 1990, The Institution of Electrical Engineers. All rights reserved.
引用
收藏
页码:1978 / 1980
页数:3
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