MOLECULAR-BEAM EPITAXY OF ALAS0.16SB0.84 AND AL0.8GA0.2AS0.14SB0.86 ON INAS SUBSTRATES

被引：18

作者：

LOTT, JA

DAWSON, LR

JONES, ED

KLEM, JF

机构：

[1] Sandia National Laboratories, Albuquerque, NM 87185-5800

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 13期

关键词：

D O I：

10.1063/1.102526

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial films of AlAs0.16Sb0.84 and Al 0.8Ga0.2As0.14Sb0.86 were grown lattice matched on (100) InAs substrates by molecular beam epitaxy. The material was characterized by x-ray diffraction, 4 K photoluminescence, and capacitance-voltage measurement techniques. At 300 K, background acceptor concentrations of 1.8×1015 and 1.4×10 16 cm-3 were determined for the unintentionally doped AlAsSb and AlGaAsSb epitaxial layers, respectively. Compensating the AlAsSb and AlGaAsSb epitaxial layers with sulfur doping resulted in high-resistivity material with an effective donor concentration of about 1014 and 1015 cm -3, respectively.

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页码：1242 / 1244

页数：3

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