SILICON-WAFER DIRECT BONDING - SIZE VARIATION OF UNCONTACTED AREAS WITH THERMAL-TREATMENT AT 1,200-DEGREES-C

被引：0
|
作者：
MISEREY, F [1 ]
ROSSETTI, P [1 ]
ARNOULD, J [1 ]
机构：
[1] SOC TELEMECAN,SILICIUM GRP,DIRECT RECH & DEV,33 AVE MARECHAL JOFFRE,F-92002 NANTERRE,FRANCE
来源：
COMPTES RENDUS DE L ACADEMIE DES SCIENCES SERIE II | 1990年 / 310卷 / 06期
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D O I：
暂无
中图分类号：
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
引用
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页码：691 / 696
页数：6
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