1.54-MU-M ROOM-TEMPERATURE ELECTROLUMINESCENCE OF ERBIUM-DOPED GAAS AND GAAIAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：40
作者：
GALTIER, P
POCHOLLE, JP
CHARASSE, MN
DECREMOUX, B
HIRTZ, JP
GROUSSIN, B
BENYATTOU, T
GUILLOT, G
机构：
[1] THOMSON COMPOSANTS MICROONDES,F-91401 ORSAY,FRANCE
[2] INST NATL SCI APPL,F-69621 VILLEURBANNE,FRANCE
来源：
APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 20期
关键词：
D O I：
10.1063/1.102077
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：2105 / 2107
页数：3
相关论文
共 14 条
[1]   OSCILLATOR-STRENGTHS, QUANTUM EFFICIENCIES, AND LASER CROSS-SECTIONS OF YB-3+ AND ER-3+ IN III-V-COMPOUNDS [J].
AUZEL, F ;
JEANLOUIS, AM ;
TOUDIC, Y .
JOURNAL OF APPLIED PHYSICS, 1989, 66 (08) :3952-3955
[2]   INTENSE AND SHARPLY STRUCTURED 1.54-MU-M ROOM-TEMPERATURE LUMINESCENCE OF ER-DOPED GAAS/ALGAAS STRUCTURES GROWN BY MBE [J].
CHARASSE, MN ;
GALTIER, P ;
HUBER, AM ;
GRATTEPAIN, C ;
CHAZELAS, J ;
HIRTZ, JP .
ELECTRONICS LETTERS, 1988, 24 (23) :1458-1460
[3]  
GALTIER P, 1989, IN PRESS 16TH P INT
[4]  
GALTIER P, 1988, IN PRESS 15TH P INT
[5]  
HIRTZ P, UNPUB
[6]  
KLEIN PB, 1988, ELECTRON LETT, V24, P1503
[7]   LOCALIZED CENTER LUMINESCENCE QUENCHING BY THE AUGER EFFECT [J].
LANGER, JM .
JOURNAL OF LUMINESCENCE, 1988, 40-1 :589-590
[8]  
NAKAGOME H, UNPUB
[9]   ERBIUM-DOPED GAAS LIGHT-EMITTING DIODE AT 1.54 MU-M [J].
ROLLAND, A ;
LECORRE, A ;
FAVENNEC, PN ;
GAUNEAU, M ;
LAMBERT, B ;
LECROSNIER, D ;
LHARIDON, H ;
MOUTONNET, D ;
ROCHAIX, C .
ELECTRONICS LETTERS, 1988, 24 (15) :956-958
[10]   ERBIUM DOPING OF MOLECULAR-BEAM EPITAXIAL GAAS [J].
SMITH, RS ;
MULLER, HD ;
ENNEN, H ;
WENNEKERS, P ;
MAIER, M .
APPLIED PHYSICS LETTERS, 1987, 50 (01) :49-51
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