TIN SELENIDE FILMS GROWN BY HOT WALL EPITAXY

被引：58
作者：
SINGH, JP
BEDI, RK
机构：
[1] Solid State Research Laboratory, Department of Physics, Guru Nanak Dev University
来源：
JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 06期
关键词：
D O I：
10.1063/1.346455
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Tin selenide films have been grown by the hot wall epitaxy technique onto glass substrates. Experimental deposition conditions are optimized to obtain better crystallinity and deposition rate. Grain size as large as 4 μm has been obtained. It has been observed that the electrical conductivity and the carrier mobility of SnSe films are comparatively higher than those obtained by conventional evaporation techniques. Analysis of optical absorption measurements indicate that the absorption edge of SnSe films is due to an allowed direct transition of energy about 1.22 eV.
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页码：2776 / 2779
页数：4
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