OXIDE ION CONDUCTORS BASED ON BISMUTHSESQUIOXIDE

被引：340
作者：
TAKAHASHI, T
IWAHARA, H
机构：
来源：
MATERIALS RESEARCH BULLETIN | 1978年 / 13卷 / 12期
关键词：
D O I：
10.1016/0025-5408(78)90138-1
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：1447 / 1453
页数：7
相关论文
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    [J]. JOURNAL OF APPLIED ELECTROCHEMISTRY, 1977, 7 (04) : 299 - 302
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    [J]. JOURNAL OF APPLIED ELECTROCHEMISTRY, 1975, 5 (03) : 187 - 195
  • [15] CONDUCTION IN BI2O3-BASED OXIDE ION CONDUCTOR UNDER LOW OXYGEN-PRESSURE .2. DETERMINATION OF PARTIAL ELECTRONIC CONDUCTIVITY
    TAKAHASHI, T
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    IWAHARA, H
    [J]. JOURNAL OF APPLIED ELECTROCHEMISTRY, 1977, 7 (04) : 303 - 308
  • [16] HIGH OXIDE ION CONDUCTION IN SINTERED OXIDE OF SYSTEM BI2O3-M2O5
    TAKAHASHI, T
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    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (10) : 1563 - 1569
  • [17] Takahashi T., 1972, J APPL ELECTROCHEM, P97, DOI [10.1007/BF00609125, DOI 10.1007/BF00609125]
  • [18] Takahashi T., 1973, J APPL ELECTROCHEM, V3, P65
  • [19] [No title captured]
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