DEFORMATION-POTENTIAL CONSTANT FOR GAMMA-L TRANSITIONS IN GASB

被引：8

作者：

BONEK, E

HILLBRAND, HA

机构：

来源：

ELECTRONICS LETTERS | 1971年 / 7卷 / 21期

关键词：

D O I：

10.1049/el:19710429

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：634 / +

页数：1

共 14 条

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HILLBRAND, HA ;

ZIMMERL, OF ;

OHMI, T .

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HILLBRAND, H .

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HILSUM, C ;

REES, HD .

ELECTRONICS LETTERS, 1970, 6 (09) :277-&

[6]

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[7]

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[8]

JANTSCH W, 1970, PHYS REV B, V3, P420

[9] TEMPERATURE DEPENDENCE OF CARRIER CONCENTRATIONS AND CONDUCTION-BAND MINIMA SEPARATION OF GALLIUM ANTIMONIDE [J].

LIANG, CY .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (08) :3866-&

[10]

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