ANISOTROPIC ETCHING OF POLYCRYSTALLINE SILICON WITH A HOT CL2 MOLECULAR-BEAM

被引：42

作者：

SUZUKI, K

HIRAOKA, S

NISHIMATSU, S

机构：

来源：

关键词：

D O I：

10.1063/1.341413

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3697 / 3705

页数：9

共 50 条

[41] TRANSLATIONAL-ENERGY-INDUCED ANISOTROPIC ETCHING OF POLY-SI BY CL2 SUPERSONIC MOLECULAR-BEAMS
TERAOKA, Y
NISHIYAMA, I
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (4B): : 2240 - 2243
[42] SILICON MOLECULAR-BEAM EPITAXY
KUBIAK, R
PARKER, E
ELECTRONICS AND POWER, 1984, 30 (11-1): : 853 - 856
[43] SILICON MOLECULAR-BEAM EPITAXY
OTA, Y
THIN SOLID FILMS, 1983, 106 (1-2) : 3 - 136
[44] SILICON MOLECULAR-BEAM EPITAXY
BEAN, JC
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (03) : C121 - C121
[45] SILICON MOLECULAR-BEAM EPITAXY
SHIRAKI, Y
PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1986, 12 (1-4) : 45 - 66
[46] SILICON MOLECULAR-BEAM EPITAXY
GRAVESTEIJN, DJ
VANDEWALLE, GFA
VANGORKUM, AA
ADVANCED MATERIALS, 1991, 3 (7-8) : 351 - 355
[47] MOLECULAR-BEAM EPITAXY OF SILICON
KASPER, E
1979, 52 (1-2): : 147 - 155
[48] SILICON MOLECULAR-BEAM EPITAXY
SHIRAKI, Y
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 725 - 729
[49] Comparison of Cl2/He, Cl2/Ar, and Cl2/Xe plasma chemistries for dry etching of NiFe and NiFeCo
Jung, KB
Cho, H
Hahn, YB
Hays, DC
Lambers, ES
Park, YD
Feng, T
Childress, JR
Pearton, SJ
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1999, 146 (04) : 1465 - 1468
[50] Inductively coupled plasma etching of III-nitrides in Cl2/Xe, Cl2/Ar and Cl2/He
Cho, H
Hahn, YB
Hays, DC
Jung, KB
Donovan, SM
Abernathy, CR
Pearton, SJ
Shul, RJ
MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 1999, 4 : art. no. - G6.56