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- [2] Reaction probability and reaction mechanism in silicon etching with a hot Cl2 molecular beam 1600, American Inst of Physics, Woodbury, NY, USA (77):
- [3] REACTION PROBABILITY AND REACTION-MECHANISM IN SILICON ETCHING WITH A HOT CL-2 MOLECULAR-BEAMJOURNAL OF APPLIED PHYSICS, 1995, 77 (12) : 6624 - 6629SUZUKI, KHIRAOKA, S
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- [6] Silicon etching in Cl2 environmentAPPLIED SURFACE SCIENCE, 2006, 253 (03) : 1581 - 1583Knizikevicius, R.
- [7] ANGLE-RESOLVED SUPERSONIC MOLECULAR-BEAM STUDY OF THE CL2/GAAS(110) THERMAL ETCHING REACTIONJOURNAL OF CHEMICAL PHYSICS, 1991, 94 (02): : 1528 - 1542DELOUISE, LA
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- [9] ANISOTROPIC ETCHING OF AL BY A DIRECTED CL2 FLUXJOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (01): : 337 - 340EFREMOW, NNGEIS, MWMOUNTAIN, RWLINCOLN, GARANDALL, JNECONOMOU, NP
- [10] ANISOTROPIC ETCHING OF POLYCRYSTALLINE SILICONJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (08) : C327 - C327YONEDA, MNISHIOKA, KITAKURA, HABE, HNAKATA, H