NEUTRON DEGRADATION OF ION-IMPLANTED AND UNIFORMLY DOPED ENHANCEMENT MODE GAAS JFETS

被引：20
|
作者：
ZULEEG, R [1 ]
LEHOVEC, K [1 ]
机构：
[1] UNIV SO CALIF,LOS ANGELES,CA 90007
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1978年 / 25卷 / 06期
关键词：
D O I：
10.1109/TNS.1978.4329550
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1444 / 1449
页数：6
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