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NEUTRON DEGRADATION OF ION-IMPLANTED AND UNIFORMLY DOPED ENHANCEMENT MODE GAAS JFETS
被引:20
|
作者
:
ZULEEG, R
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SO CALIF,LOS ANGELES,CA 90007
UNIV SO CALIF,LOS ANGELES,CA 90007
ZULEEG, R
[
1
]
LEHOVEC, K
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SO CALIF,LOS ANGELES,CA 90007
UNIV SO CALIF,LOS ANGELES,CA 90007
LEHOVEC, K
[
1
]
机构
:
[1]
UNIV SO CALIF,LOS ANGELES,CA 90007
来源
:
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
|
1978年
/ 25卷
/ 06期
关键词
:
D O I
:
10.1109/TNS.1978.4329550
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:1444 / 1449
页数:6
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