首页
学术期刊
论文检测
AIGC检测
热点
更多
数据
LOW TEMPERATURE NON-OHMIC TRANSPORT IN N-TYPE GAAS
被引:0
|
作者
:
CRANDALL, R
论文数:
0
引用数:
0
h-index:
0
CRANDALL, R
GWOZDZ, P
论文数:
0
引用数:
0
h-index:
0
GWOZDZ, P
机构
:
来源
:
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY
|
1968年
/ 13卷
/ 03期
关键词
:
D O I
:
暂无
中图分类号
:
O4 [物理学];
学科分类号
:
0702 ;
摘要
:
引用
收藏
页码:407 / &
相关论文
共 50 条
[31]
AU-GE/IN OHMIC CONTACTS TO N-TYPE GAAS
BARNARD, WO
论文数:
0
引用数:
0
h-index:
0
机构:
CSIR,NATL INST MAT RES,PRETORIA 0001,SOUTH AFRICA
BARNARD, WO
WILLIS, AJ
论文数:
0
引用数:
0
h-index:
0
机构:
CSIR,NATL INST MAT RES,PRETORIA 0001,SOUTH AFRICA
WILLIS, AJ
THIN SOLID FILMS,
1988,
165
(01)
: 77
-
82
[32]
Microstructural analysis of NiInGe ohmic contacts for n-type GaAs
Yukito Tsunoda
论文数:
0
引用数:
0
h-index:
0
机构:
Kyoto University,Department of Materials Science and Engineering
Yukito Tsunoda
Masanori Murakami
论文数:
0
引用数:
0
h-index:
0
机构:
Kyoto University,Department of Materials Science and Engineering
Masanori Murakami
Journal of Electronic Materials,
2002,
31
: 76
-
81
[33]
GERMANIUM-PALLADIUM OHMIC CONTACTS TO N-TYPE GAAS
THOMPSON, JJ
论文数:
0
引用数:
0
h-index:
0
机构:
Dept. of Electron. and Electr. Eng., Glasgow Univ.
THOMPSON, JJ
BEAUMONT, SP
论文数:
0
引用数:
0
h-index:
0
机构:
Dept. of Electron. and Electr. Eng., Glasgow Univ.
BEAUMONT, SP
KEAN, AH
论文数:
0
引用数:
0
h-index:
0
机构:
Dept. of Electron. and Electr. Eng., Glasgow Univ.
KEAN, AH
STANLEY, CR
论文数:
0
引用数:
0
h-index:
0
机构:
Dept. of Electron. and Electr. Eng., Glasgow Univ.
STANLEY, CR
SEMICONDUCTOR SCIENCE AND TECHNOLOGY,
1990,
5
(06)
: 596
-
599
[34]
NON-OHMIC TRANSPORT IN SEMICONDUCTORS IN A MAGNETIC FIELD
MATZ, D
论文数:
0
引用数:
0
h-index:
0
MATZ, D
GARCIAMOLINER, F
论文数:
0
引用数:
0
h-index:
0
GARCIAMOLINER, F
PHYSICA STATUS SOLIDI,
1964,
5
(03):
: 495
-
509
[35]
INTERFACIAL MICROSTRUCTURE OF NIINW OHMIC CONTACT TO N-TYPE GAAS
SHIH, YC
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
SHIH, YC
MURAKAMI, M
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
MURAKAMI, M
WILKIE, EL
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
WILKIE, EL
PRICE, WH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
PRICE, WH
JOURNAL OF ELECTRONIC MATERIALS,
1988,
17
(04)
: S25
-
S25
[36]
NiGe-based ohmic contacts to n-type GaAs
Furumai, M
论文数:
0
引用数:
0
h-index:
0
机构:
JEOL LTD,AKISHIMA,TOKYO 196,JAPAN
JEOL LTD,AKISHIMA,TOKYO 196,JAPAN
Furumai, M
Oku, T
论文数:
0
引用数:
0
h-index:
0
机构:
JEOL LTD,AKISHIMA,TOKYO 196,JAPAN
JEOL LTD,AKISHIMA,TOKYO 196,JAPAN
Oku, T
Ishikawa, H
论文数:
0
引用数:
0
h-index:
0
机构:
JEOL LTD,AKISHIMA,TOKYO 196,JAPAN
JEOL LTD,AKISHIMA,TOKYO 196,JAPAN
Ishikawa, H
Otsuki, A
论文数:
0
引用数:
0
h-index:
0
机构:
JEOL LTD,AKISHIMA,TOKYO 196,JAPAN
JEOL LTD,AKISHIMA,TOKYO 196,JAPAN
Otsuki, A
Koide, Y
论文数:
0
引用数:
0
h-index:
0
机构:
JEOL LTD,AKISHIMA,TOKYO 196,JAPAN
JEOL LTD,AKISHIMA,TOKYO 196,JAPAN
Koide, Y
JOURNAL OF ELECTRONIC MATERIALS,
1996,
25
(11)
: 1684
-
1694
[37]
AL-GE OHMIC CONTACTS TO N-TYPE GAAS
ZULEEG, R
论文数:
0
引用数:
0
h-index:
0
ZULEEG, R
FRIEBERTSHAUSER, PE
论文数:
0
引用数:
0
h-index:
0
FRIEBERTSHAUSER, PE
STEPHENS, JM
论文数:
0
引用数:
0
h-index:
0
STEPHENS, JM
WATANABE, SH
论文数:
0
引用数:
0
h-index:
0
WATANABE, SH
IEEE ELECTRON DEVICE LETTERS,
1986,
7
(11)
: 603
-
604
[38]
Microstructural analysis of NiInGe ohmic contacts for n-type GaAs
Tsunoda, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Kyoto Univ, Dept Mat Sci & Engn, Sakyo Ku, Kyoto 6068501, Japan
Kyoto Univ, Dept Mat Sci & Engn, Sakyo Ku, Kyoto 6068501, Japan
Tsunoda, Y
Murakami, M
论文数:
0
引用数:
0
h-index:
0
机构:
Kyoto Univ, Dept Mat Sci & Engn, Sakyo Ku, Kyoto 6068501, Japan
Kyoto Univ, Dept Mat Sci & Engn, Sakyo Ku, Kyoto 6068501, Japan
Murakami, M
JOURNAL OF ELECTRONIC MATERIALS,
2002,
31
(01)
: 76
-
81
[39]
HIGH-TEMPERATURE CARRIER TRANSPORT IN N-TYPE EPITAXIAL GAAS
NICHOLS, KH
论文数:
0
引用数:
0
h-index:
0
机构:
WASHINGTON UNIV, SEMICOND RES LAB, ST LOUIS, MO 63130 USA
WASHINGTON UNIV, SEMICOND RES LAB, ST LOUIS, MO 63130 USA
NICHOLS, KH
YEE, CML
论文数:
0
引用数:
0
h-index:
0
机构:
WASHINGTON UNIV, SEMICOND RES LAB, ST LOUIS, MO 63130 USA
WASHINGTON UNIV, SEMICOND RES LAB, ST LOUIS, MO 63130 USA
YEE, CML
WOLFE, CM
论文数:
0
引用数:
0
h-index:
0
机构:
WASHINGTON UNIV, SEMICOND RES LAB, ST LOUIS, MO 63130 USA
WASHINGTON UNIV, SEMICOND RES LAB, ST LOUIS, MO 63130 USA
WOLFE, CM
SOLID-STATE ELECTRONICS,
1980,
23
(02)
: 109
-
116
[40]
LOW-TEMPERATURE OHMIC AU/SB CONTACTS TO N-TYPE SI
WERNER, JH
论文数:
0
引用数:
0
h-index:
0
机构:
MAX PLANCK INST MET RES, D-70569 STUTTGART, GERMANY
MAX PLANCK INST MET RES, D-70569 STUTTGART, GERMANY
WERNER, JH
SPADACCINI, U
论文数:
0
引用数:
0
h-index:
0
机构:
MAX PLANCK INST MET RES, D-70569 STUTTGART, GERMANY
MAX PLANCK INST MET RES, D-70569 STUTTGART, GERMANY
SPADACCINI, U
BANHART, F
论文数:
0
引用数:
0
h-index:
0
机构:
MAX PLANCK INST MET RES, D-70569 STUTTGART, GERMANY
MAX PLANCK INST MET RES, D-70569 STUTTGART, GERMANY
BANHART, F
JOURNAL OF APPLIED PHYSICS,
1994,
75
(02)
: 994
-
997
←
1
2
3
4
5
→