HIGH-FIELD TRANSPORT PHENOMENOLOGY - HOT-ELECTRON GENERATION AT SEMICONDUCTOR INTERFACES

被引：19

作者：

BLATTER, G ^{[2
]}

BAERISWYL, D

机构：

[1] CORNELL UNIV,ATOM & SOLID STATE PHYS LAB,ITHACA,NY 14853

[2] BROWN BOVERI & CO LTD,RES CTR,CH-5405 BADEN,SWITZERLAND

来源：

PHYSICAL REVIEW B | 1987年 / 36卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.36.6446

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：6446 / 6464

页数：19

相关论文

共 46 条

[1] SCATTERING BY IONIZATION AND PHONON EMISSION IN SEMICONDUCTORS
ALIG, RC
BLOOM, S
STRUCK, CW
[J]. PHYSICAL REVIEW B, 1980, 22 (12) : 5565 - 5582
[2] BALLISTIC ELECTRONS IN AN INHOMOGENEOUS SUB-MICRON STRUCTURE - THERMAL AND CONTACT EFFECTS
BARANGER, HU
WILKINS, JW
[J]. PHYSICAL REVIEW B, 1984, 30 (12): : 7349 - 7351
[3] SELF-SCATTERING PATH-VARIABLE FORMULATION OF HIGH-FIELD, TIME-DEPENDENT, QUANTUM KINETIC-EQUATIONS FOR SEMICONDUCTOR TRANSPORT IN THE FINITE-COLLISION DURATION REGIME
BARKER, JR
FERRY, DK
[J]. PHYSICAL REVIEW LETTERS, 1979, 42 (26) : 1779 - 1781
[4] BAYM G, 1973, LECTURES QUANTUM MEC, P213
[5] ELECTRICAL BREAKDOWN AT SEMICONDUCTOR GRAIN-BOUNDARIES
BLATTER, G
GREUTER, F
[J]. PHYSICAL REVIEW B, 1986, 34 (12): : 8555 - 8572
[6] CARRIER TRANSPORT THROUGH GRAIN-BOUNDARIES IN SEMICONDUCTORS
BLATTER, G
GREUTER, F
[J]. PHYSICAL REVIEW B, 1986, 33 (06): : 3952 - 3966
[7] Bruesch P., 1982, PHONONS THEORY EXPT, V34
[8] THEORY OF IMPURITY SCATTERING IN SEMICONDUCTORS
CONWELL, E
WEISSKOPF, VF
[J]. PHYSICAL REVIEW, 1950, 77 (03): : 388 - 390
[9] THEORY OF HIGH-FIELD ELECTRON-TRANSPORT IN SILICON DIOXIDE
FISCHETTI, MV
DIMARIA, DJ
BRORSON, SD
THEIS, TN
KIRTLEY, JR
[J]. PHYSICAL REVIEW B, 1985, 31 (12) : 8124 - 8142
[10] The mean free path of electrons in polar crystals
Frohlich, H
Mott, NF
[J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1939, 171 (A947) : 0496 - 0504

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