HIGH-FIELD TRANSPORT PHENOMENOLOGY - HOT-ELECTRON GENERATION AT SEMICONDUCTOR INTERFACES

被引：19

作者：

BLATTER, G ^{[2
]}

BAERISWYL, D

机构：

[1] CORNELL UNIV,ATOM & SOLID STATE PHYS LAB,ITHACA,NY 14853

[2] BROWN BOVERI & CO LTD,RES CTR,CH-5405 BADEN,SWITZERLAND

来源：

PHYSICAL REVIEW B | 1987年 / 36卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.36.6446

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：6446 / 6464

页数：19

共 46 条

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