LIGHT SPOT SCANNER ON A GALLIUM-ARSENIDE STRIP

被引：0

作者：

TANI, Z ^{[1
]}

MURATA, K ^{[1
]}

SAKURAI, T ^{[1
]}

HIJIKATA, T ^{[1
]}

INOGUCHI, T ^{[1
]}

MITO, S ^{[1
]}

机构：

[1] SHARP CORP,NARA,JAPAN

来源：

关键词：

D O I：

10.1016/0038-1101(77)90143-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：469 / &

共 50 条

[31] HALL FACTOR OF GALLIUM-ARSENIDE
BORISOVA, LA
KRAVCHENKO, AF
KOT, KN
SKOK, EM
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 6 (05): : 693 - +
[32] PHOSPHORUS DIFFUSION IN GALLIUM-ARSENIDE
JAIN, GC
SADANA, DK
DAS, BK
SOLID-STATE ELECTRONICS, 1976, 19 (08) : 731 - 736
[33] RELIABILITY OF GALLIUM-ARSENIDE DEVICES
MAURER, RH
CHAO, KD
BARGERON, CB
BENSON, RC
NHAN, E
JOHNS HOPKINS APL TECHNICAL DIGEST, 1992, 13 (03): : 407 - 417
[34] EPITAXIAL GALLIUM-ARSENIDE GROWTH
不详
ELECTRONIC ENGINEERING, 1979, 51 (627): : 10 - 10
[35] IMPURITY THERMOREFLECTION OF GALLIUM-ARSENIDE
REZNICHENKO, MF
SALMAN, EG
VERTOPRAKHOV, VN
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 8 (06): : 741 - 743
[36] MOBILITY OF DISLOCATIONS IN GALLIUM-ARSENIDE
ALEXANDER, H
GOTTSCHALK, H
INSTITUTE OF PHYSICS CONFERENCE SERIES, 1989, (104): : 281 - 292
[37] MEV IMPLANTATION OF GALLIUM-ARSENIDE
KANBER, H
CHEN, JC
BARGER, MJ
ION BEAM PROCESSING OF ADVANCED ELECTRONIC MATERIALS, 1989, 147 : 185 - 190
[38] GALLIUM-ARSENIDE TECHNOLOGY ON THE MOVE
BOND, J
COMPUTER DESIGN, 1985, 24 (01): : 72 - &
[39] CHARACTERIZATION OF DEFECTS IN GALLIUM-ARSENIDE
KUMAR, V
MOHAPATRA, YN
BULLETIN OF MATERIALS SCIENCE, 1990, 13 (1-2) : 83 - 88
[40] GALLIUM-ARSENIDE ON SILICON - A REVIEW
MORKOC, H
UNLU, H
ZABEL, H
OTSUKA, N
SOLID STATE TECHNOLOGY, 1988, 31 (03) : 71 - 76