POSITRON-ANNIHILATION AND POSITRON PROFILES IN SI, IRRADIATED BY SUPER DENSE ELECTRON PULSES

被引:9
作者
POGREBNYAK, AD
KUZMINIKH, VA
RASZOV, VI
RUDNEV, AS
机构
来源
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1981年 / 107卷 / 02期
关键词
D O I
10.1002/pssb.2221070246
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:K79 / K82
页数:4
相关论文
共 9 条
[1]  
AREFEV KP, 1979, FIZ TVERD TELA+, V21, P2213
[2]   INFLUENCE OF HIGH-TEMPERATURE ANNEALING ON POSITRON-ANNIHILATION IN ELECTRON-IRRADIATED SILICON [J].
AREFIEV, KP ;
TSOI, AA ;
VOROBIEV, SA .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 47 (02) :K149-K152
[3]  
AREFIEV KP, 1980, TKKF A411 REP
[4]  
AREFIEV KP, 1980, 11TH INT C DEF RAD E
[5]  
BALICHEV IN, 1979, ZH TEKH FIZ, V49, P2270
[6]  
DVURECHENSKII AV, 1980, FIZ TEKH POLUPROV, V15, P996
[7]   ANNIHILATION OF POSITRONS IN ELECTRON-IRRADIATED SILICON-CRYSTALS [J].
FUHS, W ;
HOLZHAUER, U ;
MANTL, S ;
RICHTER, FW ;
STURM, R .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1978, 89 (01) :69-75
[8]  
POGREBNYAK AD, UNPUBLISHED
[9]  
ZAIKOVSKAYA MA, 1967, FIZ TEKH POLUPROV, V2, P1137