INSTRUMENTATION FOR ELECTRON-BEAM LITHOGRAPHY

[1] BARTELT JL, 1973, 165 M ACS ORG COAT P, V33

[2] BOWDEN MJ, 1973, 165 M ACS ORG COAT P, V33

[3] BROERS AN, 1972, 5TH P INT C EL ION B, P3

[4] CHANG THP, 1974, 6 INT C EL ION BEAM

[5] CHANG THP, 1974, 8 INT C EL MICR CANB

[6] CHANG THP, 1972, IEEE T ELECTRON DEVI, VED19, P629

[7] HIGH-RESOLUTION POSITIVE RESISTS FOR ELECTRON-BEAM EXPOSURE [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1968, 12 (03) : 251 - +

[8] HATZAKIS M, 1969, 10 S EL ION LAS BEAM, P107

[9] EPOXIDE-CONTAINING POLYMERS AS HIGHLY SENSITIVE ELECTRON-BEAM RESISTS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (04) : 669 - &

[10] KOOPS H, 1968, OPTIK, V28, P518

[1] BARTELT JL, 1973, 165 M ACS ORG COAT P, V33

[2] BOWDEN MJ, 1973, 165 M ACS ORG COAT P, V33

[3] BROERS AN, 1972, 5TH P INT C EL ION B, P3

[4] CHANG THP, 1974, 6 INT C EL ION BEAM

[5] CHANG THP, 1974, 8 INT C EL MICR CANB

[6] CHANG THP, 1972, IEEE T ELECTRON DEVI, VED19, P629

[7] HIGH-RESOLUTION POSITIVE RESISTS FOR ELECTRON-BEAM EXPOSURE [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1968, 12 (03) : 251 - +

[8] HATZAKIS M, 1969, 10 S EL ION LAS BEAM, P107

[9] EPOXIDE-CONTAINING POLYMERS AS HIGHLY SENSITIVE ELECTRON-BEAM RESISTS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (04) : 669 - &

[10] KOOPS H, 1968, OPTIK, V28, P518