LITHIUM PASSIVATION OF ZN AND CD ACCEPTORS IN P-TYPE GAAS

被引：17

作者：

YANG, BH

GISLASON, HP

LINNARSSON, M

机构：

[1] CHINESE ACAD SCI,SEMICOND MAT SCI LAB,BEIJING,PEOPLES R CHINA

[2] CHINESE ACAD SCI,INST SEMICOND,BEIJING,PEOPLES R CHINA

[3] ROYAL INST TECHNOL,S-16428 KISTA,SWEDEN

来源：

PHYSICAL REVIEW B | 1993年 / 48卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.48.12345

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report lithium passivation of the shallow acceptors Zn and Cd in p-type GaAs which we attribute to the formation of neutral Li-Zn and Li-Cd complexes. Similar to hydrogen, another group-I element, lithium strongly reduces the concentration of free holes when introduced into p-type GaAs. The passivation is inferred from an increase of both the hole mobility and the resisitivity throughout the bulk of the sample. It is observed most clearly for Li concentrations comparable to the shallow-acceptor concentration. In addition, compensation of shallow acceptors by randomly distributed donors is present in varying degree in the Li-diffused samples. Unlike hydrogenation of n-type GaAs, Li doping shows no evidence of neutralizing shallow donors in GaAs.

引用

页码：12345 / 12348

页数：4

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