RECRYSTALLIZATION OF CVD POLY-SI ON INSULATOR BY DUAL ELECTRON-BEAM PROCESSING

被引：15

作者：

DAVIS, JR

MCMAHON, RA

AHMED, H

机构：

来源：

ELECTRONICS LETTERS | 1982年 / 18卷 / 04期

关键词：

D O I：

10.1049/el:19820112

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：163 / 164

页数：2

共 7 条

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[6]

MCMAHON RA, UNPUB LASER ELECTRON

[7] IMPROVED TECHNIQUES FOR GROWTH OF LARGE-AREA SINGLE-CRYSTAL SI SHEETS OVER SIO2 USING LATERAL EPITAXY BY SEEDED SOLIDIFICATION [J].

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FAN, JCC ;

GEIS, MW ;

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