SURFACE RECOMBINATION VELOCITY-MEASUREMENTS AT THE SILICON-SILICON DIOXIDE INTERFACE BY MICROWAVE-DETECTED PHOTOCONDUCTANCE DECAY

被引：96

作者：

STEPHENS, AW

ABERLE, AG

GREEN, MA

机构：

[1] Centre for Photovoltaic Devices and Systems, University of New South Wales, Kensington

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 76卷 / 01期

关键词：

D O I：

10.1063/1.357082

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This article presents measurements of the effective surface recombination velocity S(eff) at the Si-SiO2 interface of thermally oxidized p-type silicon wafers as a function of carrier injection level. The experiments cover a large range of injection levels and substrate resistivities, using the ''microwave-detected photoconductance decay'' method. A minimum in S(eff) has been observed experimentally. The experimental results for S(eff) are compared with calculations based on an extended Shockley-Read-Hall formalism which includes surface band bending effects due to oxide charges.

引用

页码：363 / 370

页数：8

共 33 条

[1]

Aberle A., 1991, Tenth E.C. Photovoltaic Solar Energy Conference. Proceedings of the International Conference, P631

[2]

Aberle A. G., 1993, Progress in Photovoltaics: Research and Applications, V1, P133, DOI 10.1002/pip.4670010204

[3] IMPACT OF ILLUMINATION LEVEL AND OXIDE PARAMETERS ON SHOCKLEY-READ-HALL RECOMBINATION AT THE SI-SIO2 INTERFACE [J].