VALLEY MIXING IN SHORT-PERIOD SUPERLATTICES AND THE INTERFACE MATRIX

被引：34

作者：

ANDO, T

机构：

[1] Institute for Solid State Physics, University of Tokyo, Minato-ku, Tokyo 106

来源：

PHYSICAL REVIEW B | 1993年 / 47卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.47.9621

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Energy levels of short-period GaAs/AlAs superlattices are calculated both in an sps * tight-binding model and in an effective-mass approximation. Mixing between GAMMA and X conduction-band valleys is shown to be successfully described by a current-conserving interface matrix giving boundary conditions among envelope functions and their derivatives at a heterointerface. Two parameters characterizing the mixing are determined.

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页码：9621 / 9628

页数：8

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