MINORITY-CARRIER DIFFUSION LENGTH AND RECOMBINATION LIFETIME IN GAAS-GE PREPARED BY LIQUID-PHASE EPITAXY

被引:82
作者
ETTENBERG, M [1 ]
KRESSEL, H [1 ]
GILBERT, SL [1 ]
机构
[1] RCA LABS, PRINCETON, NJ 08540 USA
关键词
D O I
10.1063/1.1662266
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:827 / 831
页数:5
相关论文
共 14 条
[1]  
ALFEROV ZI, 1970, SOV PHYS SEMICOND+, V3, P1234
[2]   INVESTIGATION OF GALLIUM ARSENIDE EMISSION DIODE CHARACTERISTICS WITH TRANSISTOR STRUCTURES [J].
ASHLEY, KL ;
DOERBECK, FH .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) :4493-&
[3]   OPTICAL MICROPROBE RESPONSE OF GAAS DIODES [J].
ASHLEY, KL ;
BIARD, JR .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (08) :129-&
[4]  
GARBE S, 1970, 3 P INT S GAAS, P208
[5]   DIRECT MEASUREMENT OF DIFFUSION LENGTH IN GAAS BY ALPHA PARTICLES [J].
GOLDSTEI.B .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (06) :2570-&
[6]   UV MICROPROBE TECHNIQUE FOR MEASUREMENT OF MINORITY-CARRIER DIFFUSIOM LENGTH IN GAP P-N JUNCTION MATERIAL [J].
HWANG, CJ ;
HASZKO, SE ;
BERGH, AA .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (12) :5117-+
[7]   DEPENDENCE ON CRYSTALLINE FACE OF BAND BENDING IN CS2 O-ACTIVATED GAAS [J].
JAMES, LW ;
ANTYPAS, GA ;
EDGECUMBE, J ;
MOON, RL ;
BELL, RL .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (12) :4976-+
[8]   ZUR MESSUNG DER DIFFUSIONSLANGE DER MINORITATSTRAGER IN HALBLEITERN [J].
JUNGK, G ;
MENNIGER, H .
PHYSICA STATUS SOLIDI, 1964, 5 (01) :169-174
[9]   LUMINESCENCE DUE TO GE ACCEPTORS IN GAAS [J].
KRESSEL, H ;
HAWRYLO, FZ ;
LEFUR, P .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (09) :4059-+
[10]   ABSORPTION EDGE IN DEGENERATE PARA TYPE GAAS [J].
KUDMAN, I ;
SEIDEL, T .
JOURNAL OF APPLIED PHYSICS, 1962, 33 (03) :771-&