DISLOCATIONS IN GAAS

被引：33

作者：

JACOB, G ^{[1
]}

FARGES, JP ^{[1
]}

SCHEMALI, C ^{[1
]}

DUSEAUX, M ^{[1
]}

HALLAIS, J ^{[1
]}

BARTELS, WJ ^{[1
]}

ROKSNOER, PJ ^{[1
]}

机构：

[1] PHILIPS RES LABS,5600 MD EINDHOVEN,NETHERLANDS

来源：

JOURNAL OF CRYSTAL GROWTH | 1982年 / 57卷 / 02期

关键词：

D O I：

10.1016/0022-0248(82)90480-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：245 / 258

页数：14

相关论文

共 39 条

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[5] THE GROWTH OF DISLOCATION-FREE GE-DOPED INP
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[6] DALDWIN EMN, 1965, J SCI INSTR, V42, P883
[7] INTRODUCTION OF DISLOCATIONS DURING GROWTH OF FLOATING-ZONE SILICON-CRYSTALS AS A RESULT OF POINT-DEFECT CONDENSATION
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[J]. JOURNAL OF CRYSTAL GROWTH, 1975, 30 (03) : 279 - 294
[8] MICRODEFECTS AND STRIATIONS IN DISLOCATION-FREE LEC-GAP CRYSTALS
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HENGST, JHT
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[J]. JOURNAL OF CRYSTAL GROWTH, 1977, 41 (01) : 13 - 28
[9] GROWTH OF HIGH-PURITY SEMI-INSULATING BULK GAAS FOR INTEGRATED-CIRCUIT APPLICATIONS
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (02) : 135 - 140
[10] FERTIN JL, 1967, I PHYS C, V3, P46

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