PHOTOLUMINESCENCE PROPERTIES OF POROUS SILICON PREPARED BY ELECTROCHEMICAL ETCHING OF SI EPITAXIAL LAYER

被引：2
|
作者：
NOSSARZEWSKAORLOWSKA, E
BRZOZOWSKI, A
机构：
来源：
ACTA PHYSICA POLONICA A | 1993年 / 84卷 / 04期
关键词：
D O I：
10.12693/APhysPolA.84.713
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The photoluminescence properties of porous layers prepared by anodization Of P/p+ silicon epitaxial wafers are presented. The shift of the photoluminescence spectrum towards shorter wavelength due to the porosity increase and the experimental dependence of the photoluminescence maximum position on HF concentration during anodization are shown. Degradation of the photoluminescence intensity dependence on the storage time is described.
引用
收藏
页码：713 / 716
页数：4
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