EVALUATION OF THE 3-LEVEL CHARGE PUMPING TECHNIQUE FOR CHARACTERIZING INTERFACE TRAPS

被引：16

作者：

SAKS, NS ^{[1
]}

ANCONA, MG ^{[1
]}

CHEN, WL ^{[1
]}

机构：

[1] YALE UNIV, NEW HAVEN, CT 06520 USA

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 18期

关键词：

D O I：

10.1063/1.107048

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Emission cross sections of Si-SiO2 interface traps have been measured as a function of trap energy with the new 3-level charge pumping technique and with standard admittance techniques. Good agreement between the different techniques is obtained, thereby validating 3-level charge pumping as a tool for characterizing interface traps.

引用

收藏

页码：2261 / 2263

页数：3

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