DEVICE QUALITY SIO2 DEPOSITED BY DISTRIBUTED ELECTRON-CYCLOTRON RESONANCE PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION WITHOUT SUBSTRATE HEATING

The deposition of high electrical quality SiO2 films on Si wafers has been achieved without substrate heating, (T < approximately 100-degrees-C), using distributed electron cyclotron resonance (DECR) microwave plasmas. We have studied the effects of the reactant gas mixture composition (O2/SiH4) on the dielectric behavior of DECR SiO2. The electrical performances of both Si-SiO2 interfaces and SiO2 films in metal-oxide-semiconductor (MOS) structures were assessed by several characterization methods including critical field (E(c)) evaluation, fixed charge densities (Q(ox)) and interface traps densities (D(it)) determinations. We report typical values of E(c) around 6 MV . cm-1, and Q(ox) and D(it) densities around 2 x 10(10) cm-2 and 3 x 10(10) cm-2 . eV-1 respectively. Thin film SOI-MOSFETs have also been fabricated to prove the DECR oxide quality.