10-MU-M GAAS ALGAAS MULTIQUANTUM WELL SCANNED ARRAY INFRARED IMAGING CAMERA

被引：79

作者：

BETHEA, CG

LEVINE, BF

SHEN, VO

ABBOTT, RR

HSEIH, SJ

机构：

[1] AT&T Bell Laboratories, Murray Hill

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1991年 / 38卷 / 05期

关键词：

D O I：

10.1109/16.78387

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A long-wavelength (lambda-c = 10.7-mu-m) infrared imaging camera that uses a GaAs/Al(x)Ga(1-x)As quantum well infrared photodetector (QWIP) array is demonstrated. Excellent pixel uniformity (2%) and noise equivalent temperature difference sensitivity (NE-DELTA-T < 0.1-degrees-C) has been achieved. Since GaAs has a more mature growth and processing technology as well as higher uniformity than HgCdTe, it shows great promise for the fabrication of large two-dimensional arrays.

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收藏

页码：1118 / 1123

页数：6

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