ATMOSPHERIC-PRESSURE ORGANOMETALLIC VAPOR-PHASE EPITAXY GROWTH OF HIGH-MOBILITY GAAS USING TRIMETHYLGALLIUM AND ARSINE

被引：4

作者：

HANNA, MC

LU, ZH

OH, EG

MAO, E

MAJERFELD, A

机构：

[1] Department of Electrical and Computer Engineering, University of Colorado, Boulder

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 11期

关键词：

D O I：

10.1063/1.103509

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial layers of GaAs with peak mobilities as high as 200 000 cm 2/V s at 50 K have been grown in an atmospheric pressure organometallic vapor phase epitaxy reactor using trimethylgallium (TMG) and arsine. The growth conditions which lead to high-mobility GaAs are described in this letter. Low-temperature photoluminescence and temperature-dependent Hall measurements are used to study the dependence of the incorporation of residual impurities on the growth temperature and arsine partial pressure. Carbon acceptor densities <1014 cm-3 were measured in the highest purity samples.

引用

页码：1120 / 1122

页数：3

共 15 条

[11] VERY HIGH-PURITY INP EPILAYER GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].