LASER ANNEALING OF CAPPED AND UNCAPPED GAAS

被引：24

作者：

KULAR, SS ^{[1
]}

SEALY, BJ ^{[1
]}

BADAWI, MH ^{[1
]}

STEPHENS, KG ^{[1
]}

SADANA, D ^{[1
]}

BOOKER, GR ^{[1
]}

机构：

[1] UNIV OXFORD,DEPT MET & MAT SCI,OXFORD,ENGLAND

来源：

ELECTRONICS LETTERS | 1979年 / 15卷 / 14期

关键词：

Annealing; Gallium arsenide; Laser-beam applications;

D O I：

10.1049/el:19790296

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ion-implanted GaAs samples have been annealed using a Q-switched ruby laser. Both Si3N4 capped and uncapped samples decomposed and gallium precipitates were formed at the surface. The gallium could be removed by dissolution in HCl to leave high-quality GaAs. © 1979, The Institution of Electrical Engineers. All rights reserved.

引用

页码：413 / 414

页数：2

共 5 条

[1] OHMIC CONTACTS PRODUCED BY LASER-ANNEALING TE-IMPLANTED GAAS [J].

BARNES, PA ;

LEAMY, HJ ;

POATE, JM ;

FERRIS, SD ;

WILLIAMS, JS ;

CELLER, GK .

APPLIED PHYSICS LETTERS, 1978, 33 (11) :965-967

[2] ELECTRICAL-PROPERTIES OF LASER-ANNEALED DONOR-IMPLANTED GAAS [J].

SEALY, BJ ;

KULAR, SS ;

STEPHENS, KG ;

CROFT, R ;

PALMER, A .

ELECTRONICS LETTERS, 1978, 14 (22) :720-721

[3]

SEALY BJ, 1978, SEP I PHYS C NIC 46

[4]

SEALY BJ, 1978, NOV P S LAS SOL INT

[5]

SEALY BJ, 1978, SEP INT C ION BEAM M

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