IMPROVEMENT OF STRUCTURAL-PROPERTIES OF SI/GE SUPERLATTICES

[1] SILICON GERMANIUM STRAINED LAYER SUPERLATTICES [J]. JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) : 431 - 438

[2] ALONSO MC, UNPUB

[3] GE-SI LAYERED STRUCTURES - ARTIFICIAL CRYSTALS AND COMPLEX CELL ORDERED SUPERLATTICES [J]. APPLIED PHYSICS LETTERS, 1986, 49 (05) : 286 - 288

[4] ANNEALING EFFECTS IN SHORT-PERIOD SI-GE STRAINED LAYER SUPERLATTICES [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (12) : 1166 - 1170

[5] FOLDED ACOUSTIC AND QUANTIZED OPTIC PHONONS IN (GAAL)AS SUPERLATTICES [J]. PHYSICAL REVIEW B, 1985, 31 (04): : 2080 - 2091

[6] EBERL K, 1989, NATO ADV SCI I E-APP, V160, P153

[7] PSEUDOMORPHIC GROWTH OF SIXGE1-X ON GAAS(110) [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1987, 2 (09) : 561 - 567

[8] EBERL K, 1987, J PHYS C SOLID STATE, V5, P329

[9] EBERL K, IN PRESS

[10] KASPER E, 1989, NATO ADV SCI I E-APP, V160, P101

[1] SILICON GERMANIUM STRAINED LAYER SUPERLATTICES [J]. JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) : 431 - 438

[2] ALONSO MC, UNPUB

[3] GE-SI LAYERED STRUCTURES - ARTIFICIAL CRYSTALS AND COMPLEX CELL ORDERED SUPERLATTICES [J]. APPLIED PHYSICS LETTERS, 1986, 49 (05) : 286 - 288

[4] ANNEALING EFFECTS IN SHORT-PERIOD SI-GE STRAINED LAYER SUPERLATTICES [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (12) : 1166 - 1170

[5] FOLDED ACOUSTIC AND QUANTIZED OPTIC PHONONS IN (GAAL)AS SUPERLATTICES [J]. PHYSICAL REVIEW B, 1985, 31 (04): : 2080 - 2091

[6] EBERL K, 1989, NATO ADV SCI I E-APP, V160, P153

[7] PSEUDOMORPHIC GROWTH OF SIXGE1-X ON GAAS(110) [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1987, 2 (09) : 561 - 567

[8] EBERL K, 1987, J PHYS C SOLID STATE, V5, P329

[9] EBERL K, IN PRESS

[10] KASPER E, 1989, NATO ADV SCI I E-APP, V160, P101