Performance of Solution Processed Zn-Sn-O Thin-film Transistors Depending on Annealing Conditions

被引：4

作者：

Han, Sangmin ^{[1
]}

Lee, Sang Yeol ^{[1
]}

Choi, Jun Young ^{[2
]}

机构：

[1] Cheongju Univ, Dept Semicond Engn, Cheongju 360764, South Korea

[2] Korea Univ, Dept Elect Engn, Seoul 136701, South Korea

来源：

TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS | 2015年 / 16卷 / 02期

关键词：

Oxide TFT; ZTO; Thin film transistor; N2; Vacuum; Wet; Annealing;

D O I：

10.4313/TEEM.2015.16.2.62

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have investigated zinc tin oxide (ZTO) thin films under various silicon ratios. ZTO TFTs were fabricated by solution processing with the bottom gate structure. Furthermore, annealing process was performed at different temperatures in various annealing conditions, such as air, vacuum and wet ambient. Completed fabrication of ZTO TFT, and the performance of TFT has been compared depending on the annealing conditions by measuring the transfer curve. In addition, structure in ZTO thin films has been investigated by X-ray diffraction spectroscopy (XRD) and Scanning electron microscope (SEM). It is confirmed that the electrical performance of ZTO TFTs are improved by adopting optimized annealing conditions. Optimized annealing condition has been found for obtaining high mobility.

引用

页码：62 / 64

页数：3

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