SCHOTTKY-BARRIER HEIGHT OF SINGLE-CRYSTAL NICKEL DISILICIDE SILICON INTERFACES

[1] CORELESS DEFECTS AND THE CONTINUITY OF EPITAXIAL NISI2/SI(100) THIN-FILMS [J]. APPLIED PHYSICS LETTERS, 1988, 52 (10) : 828 - 830

[2] FOLL H, 1982, PHILOS MAG A, V45, P31, DOI 10.1080/01418618208243901

[3] THE EFFECTS OF NUCLEATION AND GROWTH ON EPITAXY IN THE COSI2/SI SYSTEM [J]. THIN SOLID FILMS, 1982, 93 (1-2) : 99 - 108

[4] LOW-TEMPERATURE SURFACE CLEANING OF SILICON AND ITS APPLICATION TO SILICON MBE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (04) : 666 - 671

[5] KIKUCHI A, UNPUB

[6] CORRELATION OF SCHOTTKY-BARRIER HEIGHT AND MICROSTRUCTURE IN THE EPITAXIAL NI SILICIDE ON SI(111) [J]. PHYSICAL REVIEW LETTERS, 1985, 54 (19) : 2139 - 2142

[7] BARRIER HEIGHTS AND SILICIDE FORMATION FOR NI, PD, AND PT ON SILICON [J]. PHYSICAL REVIEW B, 1981, 24 (06): : 3354 - 3359

[8] EFFECTS OF VARIATIONS OF SILICIDE CHARACTERISTICS ON THE SCHOTTKY-BARRIER HEIGHT OF SILICIDE-SILICON INTERFACES [J]. PHYSICAL REVIEW B, 1983, 28 (08): : 4593 - 4601

[9] SILICON MOLECULAR-BEAM EPITAXY [J]. PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1986, 12 (1-4) : 45 - 66

[10] FORMATION OF ULTRATHIN SINGLE-CRYSTAL SILICIDE FILMS ON SI - SURFACE AND INTERFACIAL STABILIZATION OF SI-NISI2 EPITAXIAL STRUCTURES [J]. PHYSICAL REVIEW LETTERS, 1983, 50 (06) : 429 - 432

[1] CORELESS DEFECTS AND THE CONTINUITY OF EPITAXIAL NISI2/SI(100) THIN-FILMS [J]. APPLIED PHYSICS LETTERS, 1988, 52 (10) : 828 - 830

[2] FOLL H, 1982, PHILOS MAG A, V45, P31, DOI 10.1080/01418618208243901

[3] THE EFFECTS OF NUCLEATION AND GROWTH ON EPITAXY IN THE COSI2/SI SYSTEM [J]. THIN SOLID FILMS, 1982, 93 (1-2) : 99 - 108

[4] LOW-TEMPERATURE SURFACE CLEANING OF SILICON AND ITS APPLICATION TO SILICON MBE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (04) : 666 - 671

[5] KIKUCHI A, UNPUB

[6] CORRELATION OF SCHOTTKY-BARRIER HEIGHT AND MICROSTRUCTURE IN THE EPITAXIAL NI SILICIDE ON SI(111) [J]. PHYSICAL REVIEW LETTERS, 1985, 54 (19) : 2139 - 2142

[7] BARRIER HEIGHTS AND SILICIDE FORMATION FOR NI, PD, AND PT ON SILICON [J]. PHYSICAL REVIEW B, 1981, 24 (06): : 3354 - 3359

[8] EFFECTS OF VARIATIONS OF SILICIDE CHARACTERISTICS ON THE SCHOTTKY-BARRIER HEIGHT OF SILICIDE-SILICON INTERFACES [J]. PHYSICAL REVIEW B, 1983, 28 (08): : 4593 - 4601

[9] SILICON MOLECULAR-BEAM EPITAXY [J]. PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1986, 12 (1-4) : 45 - 66

[10] FORMATION OF ULTRATHIN SINGLE-CRYSTAL SILICIDE FILMS ON SI - SURFACE AND INTERFACIAL STABILIZATION OF SI-NISI2 EPITAXIAL STRUCTURES [J]. PHYSICAL REVIEW LETTERS, 1983, 50 (06) : 429 - 432