PHOTOEMISSION INVESTIGATION OF GE AND SIGE ALLOY SURFACES AFTER REACTIVE ION ETCHING

被引：20

作者：

ROBEY, SW

BRIGHT, AA

OEHRLEIN, GS

IYER, SS

DELAGE, SL

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 06期

关键词：

D O I：

10.1116/1.584424

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1650 / 1656

页数：7

共 21 条

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