FORMATION OF ZNAL2O4 IN THE PRESENCE OF CL-2

被引:2
|
作者
TSUCHIDA, T
机构
[1] Department of Applied Chemistry, Faculty of Engineering, Hokkaido University, Sapporo,060, Japan
关键词
Zinc oxide - X ray diffraction - Electron probe microanalysis - II-VI semiconductors - Activation energy - Alumina - Aluminum oxide - Scanning electron microscopy;
D O I
10.1111/j.1151-2916.1988.tb06421.x
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The formation of ZnAl2O4 spinel in diffusion couples of Al2O3 and ZnO was investigated between 1000° and 1390°C in air and in air containing 4.8 vol% Cl2 by X-ray diffraction, electron probe microanalysis, and scanning electron microscopy. The rate of formation of a spinel layer obeyed a parabolic rate law and was accelerated remarkably by the presence of Cl2. The interdiffusion coefficient, D˜, and the activation energy, E, were calculated to be 10−8 to 10−9 cm2/s and 123 kcal/mol (514 kJ/mol) in air and 10−7 cm2/s and 31 kcal/mol (130 kJ/mol) in air containing 4.8 vol% Cl2, respectively. © 1988 Wiley. All rights reserved.
引用
收藏
页码:C404 / C405
页数:2
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