PHOTOLUMINESCENCE STUDY OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS FABRICATED BY MOLECULAR-BEAM EPITAXY

被引：0

作者：

EDA, K

INADA, M

机构：

[1] Matsushita Electric Industrial Co, Osaka, Jpn, Matsushita Electric Industrial Co, Osaka, Jpn

来源：

JOURNAL OF LUMINESCENCE | 1988年 / 40-1卷

关键词：

D O I：

10.1016/0022-2313(88)90425-5

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：759 / 760

页数：2

共 50 条

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