PHOTOLUMINESCENCE STUDY OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS FABRICATED BY MOLECULAR-BEAM EPITAXY

被引：0
|
作者：
EDA, K
INADA, M
机构：
[1] Matsushita Electric Industrial Co, Osaka, Jpn, Matsushita Electric Industrial Co, Osaka, Jpn
来源：
JOURNAL OF LUMINESCENCE | 1988年 / 40-1卷
关键词：
D O I：
10.1016/0022-2313(88)90425-5
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
2
引用
收藏
页码：759 / 760
页数：2
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