PHOTOLUMINESCENCE STUDY OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS FABRICATED BY MOLECULAR-BEAM EPITAXY

被引：0
|
作者：
EDA, K
INADA, M
机构：
[1] Matsushita Electric Industrial Co, Osaka, Jpn, Matsushita Electric Industrial Co, Osaka, Jpn
来源：
JOURNAL OF LUMINESCENCE | 1988年 / 40-1卷
关键词：
D O I：
10.1016/0022-2313(88)90425-5
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
2
引用
收藏
页码：759 / 760
页数：2
相关论文
共 50 条
  • [1] ALGAAS/GE/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY MOLECULAR-BEAM EPITAXY
    STRITE, S
    UNLU, MS
    ADOMI, K
    GAO, GB
    MORKOC, H
    IEEE ELECTRON DEVICE LETTERS, 1990, 11 (05) : 233 - 235
  • [2] CARBON DOPING FOR ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS BY MOLECULAR-BEAM EPITAXY
    ITO, H
    NAKAJIMA, O
    ISHIBASHI, T
    APPLIED PHYSICS LETTERS, 1993, 62 (17) : 2099 - 2101
  • [3] NOVEL ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS FABRICATED BY 2-STAGE MOLECULAR-BEAM EPITAXY
    CHEN, HR
    CHANG, CY
    TSAI, KL
    TSANG, JS
    LEE, CP
    SOLID-STATE ELECTRONICS, 1993, 36 (04) : 485 - 487
  • [4] ALGAAS/GAAS SINGLE HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN ON INP BY MOLECULAR-BEAM EPITAXY
    AGARWALA, S
    WON, T
    MORKOC, H
    APPLIED PHYSICS LETTERS, 1989, 54 (12) : 1151 - 1153
  • [5] ALGAAS INGAAS GAAS STRAINED-LAYER HETEROJUNCTION BIPOLAR-TRANSISTORS BY MOLECULAR-BEAM EPITAXY
    SULLIVAN, GJ
    ASBECK, PM
    CHANG, MF
    MILLER, DL
    WANG, KC
    ELECTRONICS LETTERS, 1986, 22 (08) : 419 - 421
  • [6] GAAS/ALGAAS HETEROJUNCTION PNP BIPOLAR-TRANSISTORS GROWN ON (100) SI BY MOLECULAR-BEAM EPITAXY
    WON, T
    LITTON, CW
    MORKOC, H
    YARIV, A
    ELECTRONICS LETTERS, 1988, 24 (10) : 588 - 590
  • [7] HIGH-GAIN NPN ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS PREPARED BY MOLECULAR-BEAM EPITAXY
    WU, CC
    LEE, SC
    LIN, HH
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1992, 31 (4A): : L385 - L387
  • [8] INFLUENCE OF SUBSTRATE ORIENTATION ON BE TRANSPORT DURING MOLECULAR-BEAM EPITAXY OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
    MOCHIZUKI, K
    GOTO, S
    MISHIMA, T
    KUSANO, C
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (11): : 3495 - 3499
  • [9] PHOTOLUMINESCENCE IN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
    EDA, K
    INADA, M
    JOURNAL OF APPLIED PHYSICS, 1987, 62 (10) : 4236 - 4243
  • [10] (AL,IN)AS/(GA,IN)AS HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY MOLECULAR-BEAM EPITAXY
    MALIK, RJ
    HAYES, JR
    CAPASSO, F
    ALAVI, K
    CHO, AY
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) : 1567 - 1567
12345