EVIDENCE FOR A NEW TYPE OF METAL-SEMICONDUCTOR INTERACTION ON GASB

被引：42

作者：

CHYE, PW

LINDAU, I

PIANETTA, P

GARNER, CM

SPICER, WE

机构：

来源：

PHYSICAL REVIEW B | 1978年 / 17卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.17.2682

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2682 / 2684

页数：3

共 8 条

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[7] METAL-INDUCED SURFACE STATES DURING SCHOTTKY-BARRIER FORMATION ON SI, GE, AND GAAS [J].

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