ANALYTICAL FORMULAS FOR CALCULATING THE PROFILE PARAMETERS OF IMPLANTED IONS

[1] Allen E.E., 1954, MATH TABLES OTHER AI, V8, P240

[2] [Anonymous], 1963, KGL DANSKE VIDENSKAB

[3] CALCULATION OF PROJECTED RANGES - ANALYTICAL SOLUTIONS AND A SIMPLE GENERAL ALGORITHM [J]. NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR): : 199 - 206

[4] SIMPLE FORMULAS FOR CALCULATING THE 1ST 2 MOMENTS OF THE DISTRIBUTION OF DOPANT IMPLANTED IN A TARGET MATERIAL AT LOW-ENERGY [J]. EUROPHYSICS LETTERS, 1987, 4 (02): : 223 - 231

[5] UNIVERSAL RELATIONS BETWEEN RANGE AND DAMAGE PROFILE PARAMETERS [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1987, 103 (1-4): : 89 - 101

[6] Hastings Jr C., 1955, APPROXIMATIONS DIGIT

[7] RANGES OF ENERGETIC IONS IN MATTER [J]. PHYSICAL REVIEW A, 1981, 23 (01): : 64 - 72

[8] LITTMARK U, 1980, STOPPING RANGES IONS, V6

[9] DETERMINATION OF THE COEFFICIENTS OF THE PEARSON DISTRIBUTION DESCRIBING THE CONCENTRATION OF IMPLANTED DOPANTS IN METALS [J]. MATERIALS SCIENCE AND ENGINEERING, 1985, 69 (01): : 21 - 23

[10] MODIFICATION OF STATIONARY XENON IMPLANTATION PROFILES IN SILICON BY LOW-ENERGY POSTBOMBARDMENT WITH INERT-GAS IONS [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 7-8 (MAR) : 366 - 370

[1] Allen E.E., 1954, MATH TABLES OTHER AI, V8, P240

[2] [Anonymous], 1963, KGL DANSKE VIDENSKAB

[3] CALCULATION OF PROJECTED RANGES - ANALYTICAL SOLUTIONS AND A SIMPLE GENERAL ALGORITHM [J]. NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR): : 199 - 206

[4] SIMPLE FORMULAS FOR CALCULATING THE 1ST 2 MOMENTS OF THE DISTRIBUTION OF DOPANT IMPLANTED IN A TARGET MATERIAL AT LOW-ENERGY [J]. EUROPHYSICS LETTERS, 1987, 4 (02): : 223 - 231

[5] UNIVERSAL RELATIONS BETWEEN RANGE AND DAMAGE PROFILE PARAMETERS [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1987, 103 (1-4): : 89 - 101

[6] Hastings Jr C., 1955, APPROXIMATIONS DIGIT

[7] RANGES OF ENERGETIC IONS IN MATTER [J]. PHYSICAL REVIEW A, 1981, 23 (01): : 64 - 72

[8] LITTMARK U, 1980, STOPPING RANGES IONS, V6

[9] DETERMINATION OF THE COEFFICIENTS OF THE PEARSON DISTRIBUTION DESCRIBING THE CONCENTRATION OF IMPLANTED DOPANTS IN METALS [J]. MATERIALS SCIENCE AND ENGINEERING, 1985, 69 (01): : 21 - 23

[10] MODIFICATION OF STATIONARY XENON IMPLANTATION PROFILES IN SILICON BY LOW-ENERGY POSTBOMBARDMENT WITH INERT-GAS IONS [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 7-8 (MAR) : 366 - 370