PROPERTIES OF EPITAXIAL YBa2Cu3Oy THIN FILMS ON SAPPHIRE WITH PrBa2Cu3Oy BUFFER LAYERS

被引：2

作者：

Boffa, V. ^{[1
]}

Paterno, G. ^{[1
]}

Romeo, C. ^{[1
]}

Rossi, V. ^{[1
]}

Penna, M. ^{[1
]}

Di Gioacchino, D. ^{[1
]}

Gambardella, U. ^{[1
]}

Barbanera, S. ^{[1
]}

Murlas, F. ^{[1
]}

机构：

[1] ENEA CRE Frascati, Via E Fermi 27, I-00044 Rome, Italy

来源：

IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY | 1993年 / 3卷 / 01期

关键词：

D O I：

10.1109/77.233885

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have grown YBa2Cu3Oy epitaxial thin films on a PrBa2Cu3Oy layer deposited on a sapphire substrate. The laser ablation technique with an XeCl excimer laser was used for both depositions. The films were deposited in situ by means of a rotating multi-target system carrying the two targets. The substrate holder was heated by a CO2 laser beam. The as deposited films show a zero resistance critical temperature of 87 K and a high degree of epitaxiality with c-axis orientation. The samples have been patterned in the shape of strips of variable width between 10 mu m and 30 mu m. D. C. transport critical current densities of YBa(2)Cu(3)Oy grown on PrBa(2)Cu(3)Oy/Al2O3 have been measured as a function of the temperature and an applied magnetic field.

引用

页码：1068 / 1069

页数：2

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