CATHODOLUMINESCENCE AND PHOTOLUMINESCENCE FROM CHEMICAL-VAPOR-DEPOSITED DIAMOND

被引:8
|
作者
YANG, XX [1 ]
BARNES, AV [1 ]
ALBERT, MM [1 ]
ALBRIDGE, RG [1 ]
MCKINLEY, JT [1 ]
TOLK, NH [1 ]
DAVIDSON, JL [1 ]
机构
[1] VANDERBILT UNIV,DEPT APPL & ENGN SCI,NASHVILLE,TN 37235
关键词
D O I
10.1063/1.358870
中图分类号
O59 [应用物理学];
学科分类号
摘要
Cathodoluminescence spectra from microwave-plasma-assisted chemical-vapor-deposited (CVD) diamond have been studied as a function of temperature at low electron energies. This investigation shows a pronounced difference between the luminescence spectra from CVD diamond films as grown and CVD diamond films annealed by rapid thermal processing at 1000°C for one minute in an argon atmosphere. The relative intensities of the dominant features at 443 nm (2.8 eV) and 510 nm (2.4 eV) are very different for unannealed and annealed samples. We report measurements of the temperature dependence of these luminescence bands. © 1995 American Institute of Physics.
引用
收藏
页码:1758 / 1761
页数:4
相关论文
共 50 条
  • [41] Micropatterning of chemical-vapor-deposited diamond films in electron beam lithography
    Kiyohara, S
    Ayano, K
    Abe, T
    Mori, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (7B): : 4532 - 4535
  • [42] NITROGEN STABILIZED (100) TEXTURE IN CHEMICAL-VAPOR-DEPOSITED DIAMOND FILMS
    LOCHER, R
    WILD, C
    HERRES, N
    BEHR, D
    KOIDL, P
    APPLIED PHYSICS LETTERS, 1994, 65 (01) : 34 - 36
  • [43] Photocapacitance study of boron-doped chemical-vapor-deposited diamond
    Zeisel, R
    Nebel, CE
    Stutzmann, M
    Gheeraert, E
    Deneuville, A
    PHYSICAL REVIEW B, 1999, 60 (04): : 2476 - 2479
  • [44] Micropatterning of chemical-vapor-deposited diamond films in electron beam lithography
    Kiyohara, Shuji
    Ayano, Kenjiro
    Abe, Takahisa
    Mori, Katsumi
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2000, 39 (7 B): : 4532 - 4535
  • [45] THICKNESS DEPENDENCE OF THE ELECTRICAL CHARACTERISTICS OF CHEMICAL-VAPOR-DEPOSITED DIAMOND FILMS
    PLANO, MA
    ZHAO, S
    GARDINIER, CF
    LANDSTRASS, MI
    KANIA, DR
    KAGAN, H
    GAN, KK
    KASS, R
    PAN, LS
    HAN, S
    SCHNETZER, S
    STONE, R
    APPLIED PHYSICS LETTERS, 1994, 64 (02) : 193 - 195
  • [46] Effect of an Ultraflat Substrate on the Epitaxial Growth of Chemical-Vapor-Deposited Diamond
    Kato, Yukako
    Umezawa, Hitoshi
    Shikata, Shin-ichi
    Touge, Mutsumi
    APPLIED PHYSICS EXPRESS, 2013, 6 (02)
  • [47] THE BARRIER HEIGHT OF SCHOTTKY DIODES WITH A CHEMICAL-VAPOR-DEPOSITED DIAMOND BASE
    HICKS, MC
    WRONSKI, CR
    GROT, SA
    GILDENBLAT, GS
    BADZIAN, AR
    BADZIAN, T
    MESSIER, R
    JOURNAL OF APPLIED PHYSICS, 1989, 65 (05) : 2139 - 2141
  • [48] Correlation of electrical properties with defects in a homoepitaxial chemical-vapor-deposited diamond
    Hani, S
    Rodriguez, G
    Taylor, A
    Plano, MA
    Moyer, MD
    Moreno, MA
    Pan, LS
    Black, DB
    Burdette, H
    Ager, JW
    Chen, A
    DIAMOND FOR ELECTRONIC APPLICATIONS, 1996, 416 : 343 - 348
  • [49] Fracture strength and toughness of chemical-vapor-deposited polycrystalline diamond films
    An, Kang
    Chen, Liangxian
    Yan, Xiongbo
    Jia, Xin
    Liu, Jinlong
    Wei, Junjun
    Zhang, Yuefei
    Lu, Fanxiu
    Li, Chengming
    CERAMICS INTERNATIONAL, 2018, 44 (15) : 17845 - 17851
  • [50] DEFECT-ENHANCED ELECTRON FIELD-EMISSION FROM CHEMICAL-VAPOR-DEPOSITED DIAMOND
    ZHU, W
    KOCHANSKI, GP
    JIN, S
    SEIBLES, L
    JOURNAL OF APPLIED PHYSICS, 1995, 78 (04) : 2707 - 2711