HIGH-PERFORMANCE OF HIGH-VOLTAGE 4H-SIC SCHOTTKY-BARRIER DIODES

被引：219
|
作者：
ITOH, A
KIMOTO, T
MATSUNAMI, H
机构：
[1] Department of Electrical Engineering, Kyoto University
来源：
IEEE ELECTRON DEVICE LETTERS | 1995年 / 16卷 / 06期
关键词：
D O I：
10.1109/55.790735
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High performance of high-voltage rectifiers could be realized utilizing 4H-SiC Schottky barrier diodes, A typical specific on-resistance (R(on)) of these devices was 1.4 x 10(3) Omega cm(3) at 24 degrees C (room temperature) with breakdown voltages as high as 800 V. These devices based on 4H-SiC had R(on)'s lower than 6H-SiC based high-power rectifiers with the same breakdown voltage, As for Schottky contact metals, Au, Ni, and Ti were employed in this study, The barrier heights of these metals for 4H-SiC were determined by the analysis of current-voltage characteristics, and the reduction of power loss could be achieved by controlling the barrier heights.
引用
收藏
页码：280 / 282
页数：3
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